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  elektronische bauelemente ssk3018k 100ma, 30v n-channel mosfet http://www.secosgmbh.com/ any changes of specification will not be informed individually. 25-apr-2013 rev. b page 1 of 2 top view a l c b d g h j f k e 1 2 3 1 2 3 1 2 source 3 drain gate *gate protection diode rohs compliant product a suffix of ?-c? specifies halogen & lead-free description ? low on-resistance ? fast switching speed ? easily designed drive circuits ? easy to parallel features ? simple drive requirement ? small package outline marking maximum ratings (t a = 25c unless otherwise specified) parameter symbol ratings unit drain ? source voltage v ds 30 v gate ? source voltage v gs 20 v continuous drain current i d 100 ma power dissipation 1 p d 200 mw maximum junction to ambient r ja 625 c / w operating junction & stor age temperature range t j , t stg 150, -55~150 c electrical characteristics (t a = 25c unless otherwise specified) parameter symbol min. typ. max. unit test conditions off characteristics drain-source breakdown voltage v (br)dss 30 - - v v gs =0, i d =10 a gate-threshold voltage v gs(th) 0.8 - 1.5 v v ds =3v , i d =100 a gate-source leakage current i gss - - 500 na v gs =20v, v ds =0 drain-source leakage current i dss - - 0.2 a v ds =30v, v gs =0 - - 8 v gs =4v, i d =10ma static drain-source on-resistance r ds(on) - - 13 ? v gs =2.5v, i d =1ma forward transconductance g fs 20 - - ms v ds =3v, i d =10ma dynamic characteristics 1 input capacitance c iss - 13 - output capacitance c oss - 9 - reverse transfer capacitance c rss - 4 - pf v ds =5v v gs =0 f=1mhz switching characteristics 1 turn-on delay time t d(on) - 15 - rise time t r - 35 - turn-off delay time t d(off) - 80 - fall time t r - 80 - ns v gs =5v, v dd =5v i d =10ma r l =500 ? r g =10 ? note: 1. these parameters have no way to verify. sot-323 millimete r millimete r ref. min. max. ref. min. max. a 1.80 2.20 g 0.100 ref. b 1.80 2.45 h 0.525 ref. c 1.15 1.35 j 0.08 0.25 d 0.80 1.10 k - - e 1.20 1.40 l 0.650 typ. f 0.20 0.40 kn
elektronische bauelemente ssk3018k 100ma, 30v n-channel mosfet http://www.secosgmbh.com/ any changes of specification will not be informed individually. 25-apr-2013 rev. b page 2 of 2 characteristic curves


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